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参数资料
| 型号： | NE552R479A-T1-A |
| 厂商： | CEL |
| 文件页数： | 7/7页 |
| 文件大小： | 599K |
| 描述： | MOSFET LD N-CHAN 3V 79A |
| 标准包装： | 1,000 |
| 晶体管类型： | N 通道 |
| 频率： | 2.45GHz |
| 增益： | 11dB |
| 电压 - 测试： | 3V |
| 额定电流： | 300mA |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 26dBm |
| 电压 - 额定： | 15V |
| 封装/外壳： | 79A |
| 供应商设备封装： | 79A |
| 包装： | 带卷 (TR) |
Data Sheet PU10124EJ03V0DS
7
NE552R479A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following
recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220
?C or higher
: 60 seconds or less
Preheating time at 120 to 180
?C
: 120?30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (%
mass)
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
: 215?C or below
Time at temperature of 200?C or higher
: 25 to 40 seconds
Preheating time at 120 to 150?C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature)
: 120?C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350?C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution
Do not use different soldering methods together (except for partial heating).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE552R479A-T1A-A | 制造商:CEL 制造商全称:CEL 功能描述:NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
| NE552R679A | 制造商:NEC 制造商全称:NEC 功能描述:3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
| NE552R679A-A | 制造商:California Eastern Laboratories (CEL) 功能描述:SILICON MEDIUM POWER LDMOSFET, ROHS COMPLIANT - Product that comes on tape, but is not reeled 制造商:California Eastern Laboratories (CEL) 功能描述:IC RF LDMOS FET 3V 79A PKG |
| NE552R679A-T1 | 制造商:NEC 制造商全称:NEC 功能描述:3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
| NE552R679A-T1A | 制造商:NEC 制造商全称:NEC 功能描述:3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
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