- 您现在的位置：买卖IC网 > Datasheet目录96 > NE5531079A-A (CEL)FET RF LDMOS 460MHZ 30V 79A Datasheet资料下载
参数资料
| 型号： | NE5531079A-A |
| 厂商： | CEL |
| 文件页数： | 8/8页 |
| 文件大小： | 377K |
| 描述： | FET RF LDMOS 460MHZ 30V 79A |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 460MHz |
| 电压 - 测试： | 7.5V |
| 额定电流： | 3A |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 40dBm |
| 电压 - 额定： | 30V |
| 封装/外壳： | 4-SMD |
| 供应商设备封装： | 79A |
| 包装： | 散装 |
8
Data Sheet PU10752EJ01V0DS
NE5531079A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220?C or higher
: 60 seconds or less
Preheating time at 120 to 180?C
: 120?30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
Wave Soldering
Peak temperature (molten solder temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature)
: 120?C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350?C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution
Do not use different soldering methods together (except for partial heating).
相关PDF资料 |
PDF描述 |
|---|---|
| NE55410GR-AZ | MOSFET LD N-CHAN 28V 16-HTSSOP |
| NE650103M-A | MESFET GAAS 2.7GHZ 3M |
| NHD-0108BZ-FSY-YBW-3V3 | LCD MOD CHAR 1X8 Y/G TRANSFL |
| NHD-0108BZ-RN-GBW | LCD MOD CHAR 1X8 NO REFL |
| NHD-0108BZ-RN-YBW-33V | LCD MOD CHAR 1X8 Y/G REFL STN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5531079A-T1-A | 功能描述:射频MOSFET电源晶体管 Silicon Medium Power LDMOSFET RoHS compliant RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5531079A-T1A-A | 功能描述:射频MOSFET电源晶体管 Silicon Medium Power LDMOSFET RoHS compliant RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5532 | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
| NE5532_09 | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
| NE5532_10 | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
发布紧急采购，3分钟左右您将得到回复。