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| 型号： | NE55410GR-AZ |
| 厂商： | CEL |
| 文件页数： | 1/12页 |
| 文件大小： | 649K |
| 描述： | MOSFET LD N-CHAN 28V 16-HTSSOP |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 2.14GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 250mA，1A |
| 电流 - 测试： | 20mA |
| 功率 - 输出： | 35.4dBm |
| 电压 - 额定： | 65V |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm）裸露焊盘 |
| 供应商设备封装： | 16-HTSSOP |
| 包装： | 散装 |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
LDMOS FIELD EFFECT TRANSISTOR
NE55410GR
N-CHANNEL SILICON POWER LDMOS FET
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
Document No. PU10542EJ02V0DS (2nd edition)
Date Published June 2005 CP(K)
The mark ?
shows major revised points.
DESCRIPTION
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
?
Two different FET’s (Q1 : Pout
= 2 W, Q2 : Pout
= 10 W) in one package
?
Over 25
dB gain available by connecting two FET’s in series
: GL (Q1)
= 13.5 dB TYP. (VDS
= 28 V, IDset (Q1)
= 20 mA, f = 2 140 MHz)
: GL (Q2)
= 11.0
dB TYP. (VDS
= 28 V, IDset (Q2)
= 100 mA, f = 2 140 MHz)
?
High 1 dB compression output power
: PO (1 dB) (Q1)
= 35.4 dBm TYP. (VDS
= 28 V, IDset (Q1)
= 20 mA, f = 2 140 MHz)
: PO (1 dB) (Q2)
= 40.4 dBm TYP. (VDS
= 28 V, IDset (Q2)
= 100 mA, f = 2 140
MHz)
?
High drain efficiency
: ?d (Q1)
= 52% TYP. (VDS
= 28 V, IDset (Q1)
= 20 mA, f = 2 140 MHz)
: ?d (Q2)
= 46% TYP. (VDS
= 28 V, IDset (Q2)
= 100 mA, f = 2 140 MHz)
?
Low intermodulation distortion
: IM3 (Q1)
= ?40 dBc TYP. (VDS
= 28 V, IDset (Q1+Q2)
= 120 mA,
f = 2 132.5/2 147.5 MHz, Pout
= 33 dBm (2 tones) )
?
Single Supply (VDS
: 3 V ?
VDS
?
30 V)
?
Excellent Thermal Stability
?
Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
?
Integrated ESD protection
?
Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
?
Digital cellular base station PA : W-CDMA/GSM/D-AMPS/PDC/N-CDMA/PCS etc.
?
UHF-band TV transmitter PA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE55410GR-T3-AZ | 功能描述:射频MOSFET电源晶体管 Silicon Medium Pwr LDMOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE555 | 制造商:NEC 制造商全称:NEC 功能描述:PRECISION TIMERS |
| NE555_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:General purpose single bipolar timers |
| NE555_12 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:General-purpose single bipolar timers |
| NE555_95 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:GENERAL PURPOSE SINGLE BIPOLAR TIMERS |
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