- 您现在的位置：买卖IC网 > PDF目录21741 > NE5531079A-T1A-A (CEL)FET RF LDMOS 460MHZ 30V 79A PDF资料下载
参数资料
| 型号： | NE5531079A-T1A-A |
| 厂商： | CEL |
| 文件页数： | 1/8页 |
| 文件大小： | 377K |
| 描述： | FET RF LDMOS 460MHZ 30V 79A |
| 标准包装： | 5,000 |
| 晶体管类型： | LDMOS |
| 频率： | 460MHz |
| 电压 - 测试： | 7.5V |
| 额定电流： | 3A |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 40dBm |
| 电压 - 额定： | 30V |
| 封装/外壳： | 79A |
| 供应商设备封装： | 79A |
| 包装： | 带卷 (TR) |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10752EJ01V0DS (1st
edition)
Date Published April
2009
NS
SILICON POWER MOS FET
NE5531079A
7.5
V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND
10
W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A
is an N-channel silicon power
laterally diffused
MOS FET specially designed as the
transmission power amplifier for 7.5
V radio systems. Die
are manufactured using our NEWMOS-M1
technology
and housed in a surface mount package.
This
device can deliver 40.0 dBm output power with 68% power added
efficiency at 460
MHz with 7.5
V supply voltage.
FEATURES
?
High output power
: Pout
= 40.0
dBm TYP. (VDS
= 7.5
V, IDset
= 200 mA, f = 460
MHz, Pin
= 25 dBm)
?
High power added efficiency
: ?add
= 68% TYP. (VDS
= 7.5
V, IDset
= 200 mA, f = 460
MHz, Pin
= 25 dBm)
?
High linear gain
: GL
= 20.5
dB TYP. (VDS
= 7.5 V, IDset
= 200 mA, f = 460 MHz, Pin
= 10 dBm)
?
Surface mount package
: 5.7 ?
5.7 ?
1.1 mm MAX.
?
Single supply
: VDS
= 7.5
V
MAX.
APPLICATIONS
?
460
MHz band radio systems
?
900 MHz band radio systems
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
NE5531079A
NE5531079A-A
79A
(Pb-Free)
W5
? 12 mm wide embossed taping
? Gate pin face the perforation
side of the tape
NE5531079A-T1
NE5531079A-T1-A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 1 kpcs/reel
NE5531079A-T1A
NE5531079A-T1A-A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 5 kpcs/reel
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A-A
相关PDF资料 |
PDF描述 |
|---|---|
| NE651R479A-T1-A | HJ-FET GAAS 1.9GHZ 1W 79A |
| NE5520279A-T1-A | MOSFET LD N-CHAN 3.2V 79A |
| CE3390-2.048 | OSC 2.0480MHZ 3.3V +/-100PPM SMD |
| CE3390-19.440 | OSC 19.440MHZ 3.3V +/-100PPM SMD |
| CE3390-18.432 | OSC 18.432MHZ 3.3V +/-100PPM SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5532 | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
| NE5532_09 | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
| NE5532_10 | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
| NE5532A | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL LOW-NOISE OPERATLONAL AMPLIFIERS |
| NE5532AD | 功能描述:运算放大器 - 运放 Dual Low-Noise Op Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。