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参数资料
| 型号： | NE5531079A-T1A-A |
| 厂商： | CEL |
| 文件页数： | 2/8页 |
| 文件大小： | 377K |
| 描述： | FET RF LDMOS 460MHZ 30V 79A |
| 标准包装： | 5,000 |
| 晶体管类型： | LDMOS |
| 频率： | 460MHz |
| 电压 - 测试： | 7.5V |
| 额定电流： | 3A |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 40dBm |
| 电压 - 额定： | 30V |
| 封装/外壳： | 79A |
| 供应商设备封装： | 79A |
| 包装： | 带卷 (TR) |
Data Sheet PU10752EJ01V0DS
2
NE5531079A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDSNote1
30
V
Gate to Source Voltage
VGS
6.0
V
Drain Current
IDS
3.0
A
Drain Current (Pulse Test)
IDSNote2
6.0
A
Total Power Dissipation
Ptot
35
W
Channel Temperature
Tch
125
?C
Storage Temperature
Tstg
?55 to +125
?C
Note
1.
VDS
will be used
under 12 V on RF operation.
2.
Duty Cycle ?
50%, Ton
?
1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
?
6.0
7.5
V
Gate to Source Voltage
VGS
1.15
1.55
2.05
V
Drain Current
IDS
?
2.0
?
A
Input Power
Pin
f = 460
MHz, VDS
= 6.0
V
?
25
30
dBm
ELECTRICAL CHARACTERISTICS
(TA
= +25?C, unless otherwise specified, using our standard test fixture)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source
Leakage
Current
IGSS
VGS
= 6.0 V
?
?
100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS
= 25 V
?
?
10
nA
Gate Threshold Voltage
Vth
VDS
= 7.5 V, IDS
= 1.0 mA
0.8
1.15
1.55
V
Thermal Resistance
Rth
Channel to Case
?
2.9
?
?C/W
Transconductance
gm
VDS
= 7.5 V, IDS
= 700?100 mA
2.5
3.2
4.0
S
Drain to Source Breakdown Voltage
BVDSS
IDSS
= 10 ?A
25
35
?
V
Output Power
Pout
f = 460 MHz, VDS
= 7.5 V,
39.0
40.0
?
dBm
Drain
Current
IDS
Pin
= 25 dBm,
?
2.0
?
A
Power Added Efficiency
?add
IDset
= 200 mA (RF OFF)
?
68
?
%
Linear Gain
GL
Note
?
20.5
?
dB
Note
Pin
= 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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