- 您现在的位置：买卖IC网 > PDF目录21740 > NE55410GR-T3-AZ (CEL)MOSFET LD N-CHAN 28V 16-HTSSOP PDF资料下载
参数资料
| 型号： | NE55410GR-T3-AZ |
| 厂商： | CEL |
| 文件页数： | 1/12页 |
| 文件大小： | 649K |
| 描述： | MOSFET LD N-CHAN 28V 16-HTSSOP |
| 标准包装： | 1,000 |
| 晶体管类型： | LDMOS |
| 频率： | 2.14GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 250mA，1A |
| 电流 - 测试： | 20mA |
| 功率 - 输出： | 35.4dBm |
| 电压 - 额定： | 65V |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm）裸露焊盘 |
| 供应商设备封装： | 16-HTSSOP |
| 包装： | 带卷 (TR) |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
LDMOS FIELD EFFECT TRANSISTOR
NE55410GR
N-CHANNEL SILICON POWER LDMOS FET
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
Document No. PU10542EJ02V0DS (2nd edition)
Date Published June 2005 CP(K)
The mark ?
shows major revised points.
DESCRIPTION
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
?
Two different FET’s (Q1 : Pout
= 2 W, Q2 : Pout
= 10 W) in one package
?
Over 25
dB gain available by connecting two FET’s in series
: GL (Q1)
= 13.5 dB TYP. (VDS
= 28 V, IDset (Q1)
= 20 mA, f = 2 140 MHz)
: GL (Q2)
= 11.0
dB TYP. (VDS
= 28 V, IDset (Q2)
= 100 mA, f = 2 140 MHz)
?
High 1 dB compression output power
: PO (1 dB) (Q1)
= 35.4 dBm TYP. (VDS
= 28 V, IDset (Q1)
= 20 mA, f = 2 140 MHz)
: PO (1 dB) (Q2)
= 40.4 dBm TYP. (VDS
= 28 V, IDset (Q2)
= 100 mA, f = 2 140
MHz)
?
High drain efficiency
: ?d (Q1)
= 52% TYP. (VDS
= 28 V, IDset (Q1)
= 20 mA, f = 2 140 MHz)
: ?d (Q2)
= 46% TYP. (VDS
= 28 V, IDset (Q2)
= 100 mA, f = 2 140 MHz)
?
Low intermodulation distortion
: IM3 (Q1)
= ?40 dBc TYP. (VDS
= 28 V, IDset (Q1+Q2)
= 120 mA,
f = 2 132.5/2 147.5 MHz, Pout
= 33 dBm (2 tones) )
?
Single Supply (VDS
: 3 V ?
VDS
?
30 V)
?
Excellent Thermal Stability
?
Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
?
Integrated ESD protection
?
Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
?
Digital cellular base station PA : W-CDMA/GSM/D-AMPS/PDC/N-CDMA/PCS etc.
?
UHF-band TV transmitter PA
相关PDF资料 |
PDF描述 |
|---|---|
| A232L21YAV2G | SWITCH TOGGLE DPDT VERT PC MNT |
| CE3390-24.704 | OSC 24.704MHZ 3.3V +/-100PPM SMD |
| CE3390-24.000 | OSC 24.000MHZ 3.3V +/-100PPM SMD |
| NE6510179A-T1-A | HJ-FET GAAS 1.9GHZ 1W 79A |
| CE3390-20.480 | OSC 20.480MHZ 3.3V +/-100PPM SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE555 | 制造商:NEC 制造商全称:NEC 功能描述:PRECISION TIMERS |
| NE555_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:General purpose single bipolar timers |
| NE555_12 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:General-purpose single bipolar timers |
| NE555_95 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:GENERAL PURPOSE SINGLE BIPOLAR TIMERS |
| NE5550234 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Power MOS FET |
发布紧急采购，3分钟左右您将得到回复。