参数资料
型号: NE55410GR-T3-AZ
厂商: CEL
文件页数: 5/12页
文件大小: 649K
描述: MOSFET LD N-CHAN 28V 16-HTSSOP
标准包装: 1,000
晶体管类型: LDMOS
频率: 2.14GHz
增益: 13.5dB
电压 - 测试: 28V
额定电流: 250mA,1A
电流 - 测试: 20mA
功率 - 输出: 35.4dBm
电压 - 额定: 65V
封装/外壳: 16-TSSOP(0.173",4.40mm)裸露焊盘
供应商设备封装: 16-HTSSOP
包装: 带卷 (TR)
Data Sheet PU10542EJ02V0DS
2
NE55410GR
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
NE55410GR
NE55410GR-T3-AZ
16-pin plastic HTSSOP
(Pb-Free)Note
55410
?
Embossed tape 12 mm wide
?
Pin 1 and 8 indicates pull
-out direction of tape
?
Qty 1 kpcs/reel
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation s
amples, contact your nearby sales office.
Part number for sample order: NE55410GR
-AZ
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Pin Name
Pin No.
Pin Name
1
Source
9
Source
2
Drain (Q2)
10
Gate (Q1)
3
Drain (Q2)
11
Source
4
Drain (Q2)
12
Drain (Q1)
5
Drain (Q2)
13
Source
6
Source
14
Gate (Q2)
7
Gate (Q1)
15
Gate (Q2)
8
Source
16
Source
Remark
All the terminals of a Q2 connected to a
circuit. Backside : Source (S)
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Ratings
Unit
Drain to Source Voltage
VDS
65
V
Gate to Source Voltage
VGS
?7
V
Drain Current (Q1)
ID (Q1)
0.25
A
Drain Current (Q2)
ID (Q2)
1.0
A
Total Device Dissipation
(Tcase
= 25?C)
Ptot
40
W
Input Power (Q1)
Pin (Q1)
f = 2.14 GHz, VDS
= 28 V
0.3
W
Input Power (Q2)
Pin (Q2)
f = 2.14 GHz, VDS
= 28 V
1.5
W
Channel Temperature
Tch
150
?C
Storage Temperature
Tstg
?65 to +150
?C
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