参数资料
型号: NES2427P-140
元件分类: 功率晶体管
英文描述: 2 CHANNEL, S BAND, GaAs, N-CHANNEL, RF POWER, MESFET
封装: T-92, 5 PIN
文件页数: 1/8页
文件大小: 47K
代理商: NES2427P-140
PRELIMINARY DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15567EJ1V0DS00 (1st edition)
Date Published June 2001 NS CP(K)
Printed in Japan
N-CHANNEL GaAs MES FET
NES2427P-140
140 W S-BAND PUSH-PULL POWER GaAs MES FET
2000, 2001
DESCRIPTION
The NES2427P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications
for WLL base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain, high
efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 2.4 to 2.7 GHz. The
device employs 0.9
m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for
superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
Push-pull type N-channel GaAs MES FET
VDS = 12.0 V operation
High output power: Pout = 140 W TYP.
High linear gain: GL = 9.5 dB TYP.
High power added efficiency:
ηadd = 38% TYP. @ VDS = 12.0 V, IDset = 6.0 A (total), f = 2.40 GHz
ORDERING INFORMATION
Part Number
Package
Supplying Form
NES2427P-140
T-92
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
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