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参数资料
| 型号： | NESG3031M14-T3-AFB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD LESS, MINIMOLD PACKAGE-4 |
| 文件页数： | 1/10页 |
| 文件大小： | 91K |
| 代理商： | NESG3031M14-T3-AFB |
FEATURES
The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
Maximum stable power gain: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3031M14
NESG3031M14-A
50 pcs (Non reel)
NESG3031M14-T3
NESG3031M14-T3-A
4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)
Note
10 kpcs/reel
8 mm wide embossed taping
Pin 1 (Collector), Pin 4 (Emitter) face
the perforation side of the tape
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PWB
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
Document No. PU10415EJ03V0DS (3rd edition)
Date Published February 2006 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2006
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NESG3032M14 | 制造商:CEL 制造商全称:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-A | 功能描述:射频硅锗晶体管 NPN Germanium Amp & Oscillator RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| NESG3032M14-EVNF24 | 功能描述:射频硅锗晶体管 Silicon Germanium Amp and Oscillator RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| NESG3032M14-T3 | 制造商:CEL 制造商全称:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-T3-A | 功能描述:射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
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