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参数资料
| 型号： | NESG3031M14-T3-AFB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD LESS, MINIMOLD PACKAGE-4 |
| 文件页数： | 5/10页 |
| 文件大小： | 91K |
| 代理商： | NESG3031M14-T3-AFB |
30
25
20
10
5
0
1
10
100
VCE = 1 V
f = 2 GHz
15
30
20
15
10
5
0
1
10
100
VCE = 2 V
f = 2 GHz
25
30
20
15
10
5
0
1
10
100
VCE = 3 V
f = 2 GHz
25
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1 000
100
10
0.1
100
VCE = 1 V
1
1 000
100
10
0.1
100
VCE = 2 V
1
1 000
100
10
0.1
100
VCE = 3 V
1
Remark The graphs indicate nominal characteristics.
Data Sheet PU10415EJ03V0DS
4
NESG3031M14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NESG3032M14 | 制造商:CEL 制造商全称:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-A | 功能描述:射频硅锗晶体管 NPN Germanium Amp & Oscillator RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| NESG3032M14-EVNF24 | 功能描述:射频硅锗晶体管 Silicon Germanium Amp and Oscillator RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| NESG3032M14-T3 | 制造商:CEL 制造商全称:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-T3-A | 功能描述:射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
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