- 您现在的位置：买卖IC网 > PDF目录299552 > NESG3031M14-T3-AFB C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | NESG3031M14-T3-AFB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD LESS, MINIMOLD PACKAGE-4 |
| 文件页数： | 8/10页 |
| 文件大小： | 91K |
| 代理商： | NESG3031M14-T3-AFB |
VCE = 3 V, f = 2.4 GHz
IC (set) = 20 mA
Pout
IC
20
15
10
5
0
–5
50
10
20
40
30
0
–20
–10
–15
–5
0
5
4
3
2
1
0
20
8
4
16
12
0
1
10
100
VCE = 2 V
f = 2.4 GHz
Ga
NF
VCE = 3 V, f = 5.8 GHz
IC (set) = 20 mA
Pout
IC
20
15
10
5
0
–5
50
10
20
30
40
0
–15
–5
–10
0
5
10
5
4
3
2
1
0
15
6
3
12
9
0
1
10
100
VCE = 2 V
f = 5.8 GHz
Ga
NF
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output
Power
P
out
(dBm)
Collector
Current
I
C
(mA)
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output
Power
P
out
(dBm)
Collector
Current
I
C
(mA)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise
Figure
NF
(dB)
Associated
Gain
G
a(dB)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise
Figure
NF
(dB)
Associated
Gain
G
a(dB)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10415EJ03V0DS
7
NESG3031M14
相关PDF资料 |
PDF描述 |
|---|---|
| NFC15-48S05 | 1-OUTPUT 15 W DC-DC REG PWR SUPPLY MODULE |
| NFC20-24S12-4 | 1-OUTPUT 20 W DC-DC REG PWR SUPPLY MODULE |
| NFC20-24S05-4 | 1-OUTPUT 20 W DC-DC REG PWR SUPPLY MODULE |
| NH000AM69V10 | ELECTRIC FUSE, 10A, 690VAC, INLINE/HOLDER |
| NH000GG69V10 | ELECTRIC FUSE, 10A, 690VAC, INLINE/HOLDER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NESG3032M14 | 制造商:CEL 制造商全称:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-A | 功能描述:射频硅锗晶体管 NPN Germanium Amp & Oscillator RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| NESG3032M14-EVNF24 | 功能描述:射频硅锗晶体管 Silicon Germanium Amp and Oscillator RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| NESG3032M14-T3 | 制造商:CEL 制造商全称:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-T3-A | 功能描述:射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。