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参数资料
| 型号： | NES65A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-257MOD, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 32K |
| 代理商： | NES65A |
6 Lake Street, Lawrence, MA 01841
REV: A
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
BIPOLAR DARLINGTON TRANSISTOR
NES65, NES65A, NES65B
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
IC = 30 mAdc, IB = 0
NES65
NES65A
NES65B
VCEO(sus)
60
80
100
Vdc
Collector-Emitter Cutoff Current
VCE = 30 Vdc, IB = 0
ICEO
1.0
mAdc
Collector Cutoff Current
VCB = Rated VCBO, vEB = 0
ICBO
0.4
mAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc, IC = 0
IEBO
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
IC = 5.0 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
hFE
1000
500
TYP
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 20 mAdc
VCE(sat)
2.0
Vdc
Base-Emitter On Voltage
IC = 5.0 Adc, VCE = 4.0 Vdc
VBE(on)
2.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc,
f = 1.0 MHz
h
fe
4.0
MHz
Output Capacitance
VCB = 10 Vdc, IE = 0,
f = 0.1 MHz
Cobo
300
pF
Small-Signal Current Gain
IC = 5.0 Adc, VCE = 3.0 Vdc,
f = 1.0 MHz
hfe
300
(1)Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
Back to Bipolar Darlington Transistors
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