参数资料
| 型号： | NIC9N05TS1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR N-CH 55V 2.6A DIE |
| 标准包装： | 3,500 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 190 毫欧 |
| 电流 - 输出 / 通道： | 2.6A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 模具 |
| 供应商设备封装： | 模具 |
| 包装： | 带卷 (TR) |
NIC9N05TS1, NIC9N05ATS1
Protected Power MOSFET
2.6 A, 52 V, N ? Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
http://onsemi.com
Rating
Drain ? to ? Source Voltage Internally Clamped
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
52 ? 59
± 15
Unit
V
V
Drain
(Pins 2, 4)
Operating and Storage Temperature Range
Electro ? Static Discharge Capability (HBM)
(MM)
T J , T stg
ESD
? 55 to 150
5000
500
° C
V
Gate
(Pin 1)
R G
Overvoltage
Protection
M PWR
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ESD Protection
Source
(Pin 3)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 1
1
Publication Order Number:
NIC9N05TS1/D
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