参数资料
| 型号： | NID6002NT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC FET SGL N-CH 6.5A 65V DPAK |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 2,500 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 185 毫欧 |
| 电流 - 峰值输出： | 6.5A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
NID6002N
Preferred Device
Self?Protected FET
with Temperature and
Current Limit
65 V, 6.5 A, Single N?Channel, DPAK
http://onsemi.com
HDPlus ? devices are an advanced series of power MOSFETs
which utilize ON Semiconductor ’s latest MOSFET technology
process to achieve the lowest possible on?resistance per silicon area
while incorporating smart features. Integrated thermal and current
V DSS
(Clamped)
65 V
R DS(on) TYP
210 m W
I D TYP
(Limited)
6.5 A
limits work together to provide short circuit protection. The devices
feature an integrated Drain?to?Gate Clamp that enables them to
withstand high energy in the avalanche mode. The Clamp also
Drain
provides additional safety margin against unexpected voltage
transients. Electrostatic Discharge (ESD) protection is provided by an
integrated Gate?to?Source Clamp.
Gate
Input
R G
Overvoltage
Protection
M PWR
Features
? Short Circuit Protection/Current Limit
? Thermal Shutdown with Automatic Restart
? I DSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Slew Rate Control for Low Noise Switching
? Overvoltage Clamped Protection
? Pb?Free Package is Available
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
1
3
2
YYW
D6
002NG
D6002N
Y
WW
G
= Device Code
= Year
= Work Week
= Pb?Free Device
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
NID6002NT4
NID6002NT4G
Package
DPAK
DPAK
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2007
April, 2007 ? Rev. 5
1
Publication Order Number:
NID6002N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NID6002NT4G | 功能描述:MOSFET NFET 60V HD+ RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NID60S24-05 | 功能描述:DC/DC转换器 20-53Vin 5Vout 4A 20W SIP non-isolated RoHS:否 制造商:Murata 产品: 输出功率: 输入电压范围:3.6 V to 5.5 V 输入电压（标称）: 输出端数量:1 输出电压（通道 1）:3.3 V 输出电流（通道 1）:600 mA 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:SMD/SMT 封装 / 箱体尺寸: |
| NID60S24-12 | 功能描述:DC/DC转换器 20-53Vin 12Vout 4A 48W SIP non-isolated RoHS:否 制造商:Murata 产品: 输出功率: 输入电压范围:3.6 V to 5.5 V 输入电压（标称）: 输出端数量:1 输出电压（通道 1）:3.3 V 输出电流（通道 1）:600 mA 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:SMD/SMT 封装 / 箱体尺寸: |
| NID60S24-15 | 功能描述:DC/DC转换器 20-53Vin 15Vout 4A 60W SIP non-isolated RoHS:否 制造商:Murata 产品: 输出功率: 输入电压范围:3.6 V to 5.5 V 输入电压（标称）: 输出端数量:1 输出电压（通道 1）:3.3 V 输出电流（通道 1）:600 mA 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:SMD/SMT 封装 / 箱体尺寸: |
| NID60S24-24 | 制造商:MEANWELL 制造商全称:Mean Well Enterprises Co., Ltd. 功能描述:20 ~ 60W DC-DC Non-isolated Single Output Converter |
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