参数资料
| 型号： | NIF5003NT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | IC FET SGL N-CHAN 14A 42V SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Obsolescence 06/Oct/2006 |
| 标准包装： | 4,000 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 53 毫欧 |
| 电流 - 峰值输出： | 14A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NIF5003N
Preferred Device
Self-Protected FET
with Temperature and
Current Limit
42 V, 14 A, Single N ? Channel, SOT ? 223
HDPlus ? devices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
http://onsemi.com
achieve the lowest possible on ? resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain ? to ? Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
V DSS
(Clamped)
42 V
R DS(on) TYP
53 m W @ 10 V
I D MAX
(Limited)
14 A
Drain
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate ? to ? Source Clamp.
Features
Gate
Input
R G
Overvoltage
Protection
M PWR
?
?
?
?
?
?
?
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb ? Free Packages are Available
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
4
SOT ? 223
Rating
Drain ? to ? Source Voltage Internally Clamped
Symbol
V DSS
Value
42
Unit
Vdc
1
2
3
CASE 318E
STYLE 3
Gate ? to ? Source Voltage
V GS
" 14
Vdc
Drain Current
Continuous
I D
Internally Limited
MARKING DIAGRAM
Total Power Dissipation
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Thermal Resistance
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
P D
R q JC
R q JA
R q JA
1.25
1.9
12
100
65
W
° C/W
GATE
DRAIN
1
2
3
4
DRAIN
Single Pulse Drain ? to ? Source Avalanche Energy E AS 233 mJ
(V DD = 25 Vdc, V GS = 5.0 Vdc,
I L = 7.0 Apk, L = 9.5 mH, R G = 25 W )
Operating and Storage Temperature Range T J , T stg ? 55 to 150 ° C
(Note 3)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412 ″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1 ″ square pad size (1.127 ″ square) FR4 PCB, 1 oz cu.
3. Normal pre ? fault operating range. See thermal limit range conditions.
SOURCE
A = Assembly Location
Y = Year
W = Work Week
5003N = Specific Device Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2008
September, 2008 ? Rev. 5
1
Publication Order Number:
NIF5003N/D
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