参数资料
| 型号： | NIMD6001ANR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 60V 3.3A 8SOIC |
| 标准包装： | 2,500 |
| 系列： | * |
NIMD6001N, NIMD6001AN
Dual N-Channel Driver with
Diagnostic Output
60 V, 3 A, 110 m W
NIMD6001N/AN is a dual 3 Amp low-side switch with an
integrated common disable input and drain diagnostic output. Pulling
the Disable pin low will override any applied gate voltages and turn off
both FET switches. Should either Drain-Source voltage exceed
approximately 50 V, a logic 1 (> 3 V) will be asserted on the
Diagnostic/Feedback pin. Internal isolation diodes permit the Disable
and Diagnostic/ Feedback pins of multiple devices to be
interconnected in a “wired-OR” configuration without additional
components.
Features
http://onsemi.com
3.0 AMPERES
60 VOLTS
R DS(on) = 110 m W
SOIC ? 8
CASE 751
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?
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?
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R DSON 110 m W Maximum at V GS = 10 V
Avalanche Energy Specified
Gate Drive Disable Input
Drain-Source Voltage Diagnostic Feedback Output
Electrically Isolated Drains for Low Crosstalk
Internal Resistors Limit Peak Transient gate Current
AEC ? Q101 Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
MARKING DIAGRAM
1 8
Source 1 Drain 1
2 7
Gate 1 Disable
3 6
Source 2 Drain 2
4 5
Gate 2 Diag/Fbk
(Top View)
D6001x = Specific Device Code
x = N or A
A = Assembly Location
Applications
? Automotive Injector Driver
? Solenoid / Relay Driver
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
1
8
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage (DC, sustained)
Gate ? to ? Source Voltage
Continuous Drain Current
V GS = 10 V, R q JA = 55 ° C/W
V GS = 5.0 V, R q JA = 55 ° C/W
Single Pulse Drain Current
Pulse duration = 80 m s
V DSS
V GS
I D
I D
60
" 20
3.3
3.0
10
Vdc
Vdc
A
A
2
3
4
7
6
5
Single Pulse Drain-to-Source
Avalanche Energy
V DD = 60 V; V GS = 10 V; I PK = 2.6 A;
L = 76 mH; Start Tj = 25 ° C
Operating Junction Temperature
Storage Temperature
E AS
T J
T STG
258
? 55 ? 150
? 55 ? 150
mJ
° C
° C
INTERNAL DIAGRAM
ORDERING INFORMATION
Device Package Shipping
NIMD6001NR2G SOIC ? 8 2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Pb ? Free)
NIMD6001ANR2G SOIC ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 6
1
Publication Order Number:
NIMD6001N/D
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相关代理商/技术参数 |
参数描述 |
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| NIMD6001NR2G | 功能描述:功率驱动器IC DUAL N CH DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NIMD6302R2 | 功能描述:MOSFET NFET S08D 30V .050R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIMD6302R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET |
| NIMD6302R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET |
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