参数资料
| 型号： | NIMD6001ANR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 60V 3.3A 8SOIC |
| 标准包装： | 2,500 |
| 系列： | * |
NIMD6001N, NIMD6001AN
TYPICAL APPLICATION CIRCUIT
C1
C2
C3
C4
FBK
S1
D1
+V DD
Injector 1
Disable
G1
S2
U1
D2
Diag
Injector 4
G2
NIMD6001/A
C1
C4
C2
C3
S1
G1
D1
Disable
Injector 2
CONTROLLER
FBK
S2
G2
U2
NIMD6001/A
D2
Diag
Injector 3
Master
Disable
Figure 17. 4 Cylinder Engine Fuel Injection
? 4-Cycle engine; 1 injector pulse during intake stroke
? To optimize transient thermal resistance of the
NIMD6001/A devices, the injector drive pulses are
? Cylinder firing order is 1-3-4-2
? The coincident FBK pulse will be missing if any
injector is open or shorted.
alternated between U1 and U2.
http://onsemi.com
8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NIMD6001NR2G | 功能描述:功率驱动器IC DUAL N CH DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NIMD6302R2 | 功能描述:MOSFET NFET S08D 30V .050R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIMD6302R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET |
| NIMD6302R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET |
| NIMES-3980 | 制造商:NI 制造商全称:National Instruments Corporation 功能描述:Industrial Ethernet Switches - Managed and Unmanaged |
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