参数资料
型号: NIMD6001ANR2G
厂商: ON Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: IC MOSFET DVR 60V 3.3A 8SOIC
标准包装: 2,500
系列: *
NIMD6001N, NIMD6001AN
TYPICAL ELECTRICAL CHARACTERISTICS
7
10
6
5
4
V GS = 3.5 V
8
6
T J = 125 ° C
3
3.0 V
4
T J = 25 ° C
2
1
2.5 V
2
T J = ? 40 ° C
0
0
0.5
1.0
1.5
2.0
0
1.5
2.0
2.5
3.0
3.5
4.0
120
V DS , DRAIN ? SOURCE VOLTAGE (V)
Figure 2. Drain Current vs. Drain ? Source
Voltage and Gate ? Source Voltage
1.0
V GS , GATE ? SOURCE VOLTAGE (V)
Figure 3. Transfer Function (pulsed). Pulse
duration = 80 m s, duty cycle < 0.5%; V DS = 2 V
100
80
V GS = 5 V, I D = 3 A
0.9
60
V GS = 10 V, I D = 3.3 A
0.8
I S = 3 A
40
0.7
20
0
? 40 ? 20
0
20
40
60
80
100
120
140
0.6
? 40 ? 20
0
20
40
60
80
100
120 140
3.0
T J , JUNCTION TEMPERATURE ( ° C)
Figure 4. Drain ? Source On Resistance vs.
Junction Temperature
5
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. Body Diode Forward Voltage vs.
Junction Temperature
2.5
T J = 25 ° C
4
T J = 25 ° C
2.0
3
1.5
1.0
0.5
2
1
0
0
10
20
30
40
50
60
70
0
0
10
20
30
40
50
60
70
V DS , DRAIN ? SOURCE VOLTAGE (V)
Figure 6. Off ? State Drain Current vs.
Drain ? Source Voltage (includes feedback
network current)
http://onsemi.com
4
V DS , DRAIN ? SOURCE VOLTAGE (V)
Figure 7. Diagnostic Feedback Voltage vs.
Drain ? Source Voltage
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