参数资料
型号: NIMD6001ANR2G
厂商: ON Semiconductor
文件页数: 6/9页
文件大小: 0K
描述: IC MOSFET DVR 60V 3.3A 8SOIC
标准包装: 2,500
系列: *
NIMD6001N, NIMD6001AN
TYPICAL THERMAL RESPONSE CHARACTERISTICS
1000
100
10
1
0.1
D = 0.8
0.5
0.2
0.1
0.04
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
ON ? TIME PULSE WIDTH (s)
Figure 11. Single Channel Active; Mounted on Minimum ? Pad Board
1000
100
10
1
0.1
D = 0.8
0.5
0.2
0.1
0.04
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
ON ? TIME PULSE WIDTH (s)
Figure 12. Single Channel Active; Mounted on 1 Sq. Inch Copper Spreader
1000
100
10
D = 0.8
0.5
0.2
0.1
0.04
0.02
0.01
1
0.1
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
ON ? TIME PULSE WIDTH (s)
Figure 13. Both Channels Active; Mounted on Minimum ? Pad Board
http://onsemi.com
6
相关PDF资料
PDF描述
NIS6201DR2G IC REG SWITCHED CAP 15V 8SOIC
NSD-1202-ASST IC DRIVER MOTOR SQUIGGLE 16-QFN
NSD-2101-ASST IC DRIVER MOTOR SQUIGGLE 16-QFN
NTGD1100LT1 MOSFET N-CHAN 3.3A 8V TSOP6
NUD3048MT1G IC FET SW N-CH 100V ESD 6TSOP
相关代理商/技术参数
参数描述
NIMD6001NR2G 功能描述:功率驱动器IC DUAL N CH DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
NIMD6302R2 功能描述:MOSFET NFET S08D 30V .050R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NIMD6302R2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET
NIMD6302R2_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET
NIMES-3980 制造商:NI 制造商全称:National Instruments Corporation 功能描述:Industrial Ethernet Switches - Managed and Unmanaged