参数资料
| 型号： | NIMD6001ANR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 60V 3.3A 8SOIC |
| 标准包装： | 2,500 |
| 系列： | * |
NIMD6001N, NIMD6001AN
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS (Notes 1 and 4)
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Time
Turn-Off Delay
Fall Time
T(on)
Td(on)
Tr
T(off)
Td(off)
Tf
V GS = 10 V; V DD = 30 V;
I D = 3.3 A, Ext. R GS = 47 W
6.0
1.7
3.9
24
15
9.0
8.0
28
m s
BODY DIODE
Source-Drain Forward On Voltage
V SD
V GS = 0 V, I SD = 3.3 A
0.85
1.25
V
DIAGNOSTIC FEEDBACK (Note 1)
Feedback voltage
V FBK
V DS = 35 V,
R FBK-SOURCE = 51 k W
1.7
V
Feedback Logical High voltage
V DS threshold voltage for logical High
V DS threshold voltage for logical Low
V FBK(HI)
V DSFBK(HI)
V DSFBK(LOW)
V DS = 60 V,
R FBK-SOURCE = 51 k W
Ramp V DS positive until
V FBK = 3.5 V
Ramp V DS negative until
V FBK = 0.8 V
3.0
45
25
5.5
65
45
V
V
V
DISABLE (Note 1)
Gate Drive Disable Input Voltage,
Gate Enable
Gate Drive Disable Input Voltage,
Gate Disable
V DIS(HI)
V DIS(LOW)
V DIS ≥ 3.0 V, V GS = 5 V,
I D = 3.0 A
V DIS ≤ 0.4 V, V GS = V DS = 10 V,
I D ≤ 250 m A; Tj = 150 ° C (Note 1)
3
0.4
V
V
1.
2.
3.
4.
These values are established by statistical characterization and may not be tested.
Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 40 sq. mm; 1 oz.)
Surface-mounted on FR4 board using 1 sq. inch heat spreader (Cu area = 625 sq. mm, 2 oz.)
Refer to Figure 1 for definition of switching characteristics symbols.
Figure 1. Switching Characteristics Waveforms and Symbols
http://onsemi.com
3
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