参数资料
| 型号： | NIF62514T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 6A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 标准包装： | 1 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 90 毫欧 |
| 电流 - 峰值输出： | 6A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NIF62514T1OSCT |
NIF62514
Self-Protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor ’s latest MOSFET technology process to
achieve the lowest possible on ? resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain ? to ? Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate ? to ? Source Clamp.
http://onsemi.com
6.0 AMPERES*
40 VOLTS CLAMPED
R DS(on) = 90 m W
Drain
Features
? Current Limitation
? Thermal Shutdown with Automatic Restart
? Short Circuit Protection
? Low R DS(on)
? I DSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Slew Rate Control for Low Noise Switching
? Overvoltage Clamped Protection
? This is a Pb ? Free Device
Gate
Input
Overvoltage
Protection
R G
ESD Protection
Temperature Current
Limit Limit
M PWR
Current
Sense
Source
MARKING
DIAGRAM
DRAIN
1
2
3
4
SOT ? 223
CASE 318E
STYLE 3
1
4
AYW
62514 G
G
2 3
GATE
SOURCE
DRAIN
A = Assembly Location
Y = Year
W = Work Week
62514 = Specific Device Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NIF62514T1G
NIF62514T3G
Package
SOT ? 223
(Pb ? Free)
SOT ? 223
Shipping ?
1000/Tape & Reel
4000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Limited by the current limit circuit.
? Semiconductor Components Industries, LLC, 2009
April, 2009 ? Rev. 7
1
Publication Order Number:
NIF62514/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NIF62514T1G | 功能描述:MOSFET 42V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIF62514T3 | 功能描述:MOSFET 42V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIF62514T3G | 功能描述:MOSFET 42V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIF9N05CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Protected Power MOSFET |
| NIF9N05CL_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Protected Power MOSFET |
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