参数资料
| 型号： | NID6002NT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | IC FET SGL N-CH 6.5A 65V DPAK |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 2,500 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 185 毫欧 |
| 电流 - 峰值输出： | 6.5A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
NID6002N
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Clamped Breakdown Voltage
V (BR)DSS
(V GS = 0 V, I D = 2 mA)
Zero Gate Voltage Drain Current
(V DS = 52 V, V GS = 0 V)
Gate Input Current
(V GS = 5.0 V, V DS = 0 V)
I DSS
I GSS
60
?
?
65
27
45
70
100
200
V
m A
m A
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = 150 m A)
Threshold Temperature Coefficient
Static Drain?to?Source On?Resistance (Note 5)
(V GS = 10 V, I D = 2.0 A, T J @ 25 ° C)
Static Drain?to?Source On?Resistance (Note 5)
(V GS = 5.0 V, I D = 2.0 A, T J @ 25 ° C)
(V GS = 5.0 V, I D = 2.0 A, T J @ 150 ° C)
V GS(th)
R DS(on)
R DS(on)
1.0
?
?
?
?
1.85
5.0
185
210
445
2.4
?
210
240
520
V
?mV/ ° C
m W
m W
Source?Drain Forward On Voltage
V SD
V
(I S = 7.0 A, V GS = 0 V)
?
0.9
1.1
SWITCHING CHARACTERISTICS (Note 8)
Turn?on Delay Time
R L = 6.6 W , V in = 0 to 10 V,
td (on)
?
96
?
ns
V DD = 13.8 V, I D = 2.0 A, 10% V in to 10% I D
Turn?on Rise Time
R L = 6.6 W , V in = 0 to 10 V,
t rise
?
250
?
ns
V DD = 13.8 V, I D = 2.0 A, 10% I D to 90% I D
Turn?off Delay Time
R L = 6.6 W , V in = 0 to 10 V,
td (off)
?
840
?
ns
V DD = 13.8 V, I D = 2.0 A, 90% V in to 90% I D
Turn?off Fall Time
R L = 6.6 W , V in = 0 to 10 V,
t fall
?
660
?
ns
V DD = 13.8 V, I D = 2.0 A, 90% I D to 10% I D
Slew Rate ON
R L = 6.6 W , V in = 0 to 10 V,
dV DS /dT on
?
73
?
V/ m s
V DD = 13.8 V, I D = 2.0 A, 70% to 50% V DD
Slew Rate OFF
R L = 6.6 W , V in = 0 to 10 V,
dV DS /dT off
?
35
?
V/ m s
V DD = 13.8 V, I D = 2.0 A, 50% to 70% V DD
SELF PROTECTION CHARACTERISTICS (Note 6)
Current Limit
Temperature Limit (Turn?off)
Thermal Hysteresis
Temperature Limit (Turn?off)
Thermal Hysteresis
Input Current during
V DS = 10 V, V GS = 5.0 V, T J = 25 ° C (Note 7)
V DS = 10 V, V GS = 5.0 V, T J = 130 ° C (Notes 7, 8)
V DS = 10 V, V GS = 10 V, T J = 25 ° C (Notes 7, 8)
V GS = 5.0 V (Note 8)
V GS = 5.0 V
V GS = 10 V (Note 8)
V GS = 10 V
V DS = 0 V, V GS = 5.0 V, T J = T J > T (fault) (Note 8)
I LIM
T LIM(off)
D T LIM(on)
T LIM(off)
D T LIM(on)
I g(fault)
4.0
4.0
?
150
?
150
?
5.5
6.4
5.5
7.9
180
10
180
20
5.2
11
11
?
200
?
200
?
?
A
° C
° C
° C
° C
mA
Thermal Fault
V DS = 0 V, V GS = 10 V, T J = T J > T (fault) (Note 8)
12
11
ESD ELECTRICAL CHARACTERISTICS
Electro?Static Discharge Capability
ESD
V
5.
6.
7.
8.
Human Body Model (HBM)
Machine Model (MM)
Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
Fault conditions are viewed as beyond the normal operating range of the part.
Current limit measured at 380 m s after gate pulse.
Not subject to production test.
8000
400
?
?
?
?
http://onsemi.com
3
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