参数资料
型号: NIF5003NT1
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CH 42V 14A SOT223
产品变化通告: Specification Change MSL Updated 2/April/2007
标准包装: 1
系列: HDPlus™
类型: 低端
输入类型: 非反相
输出数: 1
导通状态电阻: 53 毫欧
电流 - 峰值输出: 14A
工作温度: -55°C ~ 150°C
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 剪切带 (CT)
其它名称: NIF5003NT1OSCT
NIF5003N
TYPICAL PERFORMANCE CURVES
10
1
V GS = 0 V
T J = 25 ° C
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 7. Diode Forward Voltage vs. Current
ORDERING INFORMATION
NIF5003NT1
NIF5003NT1G
NIF5003NT3
NIF5003NT3G
Device
Package
SOT ? 223
SOT ? 223
(Pb ? Free)
SOT ? 223
SOT ? 223
(Pb ? Free)
Shipping ?
1000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
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相关代理商/技术参数
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NIF5003NT1G 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NIF5003NT3 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NIF5003NT3G 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NIF62514 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-protected FET with Temperature and Current Limit
NIF62514_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self−protected FET with Temperature and Current Limit