参数资料
型号: NIS6201DR2G
厂商: ON Semiconductor
文件页数: 5/7页
文件大小: 0K
描述: IC REG SWITCHED CAP 15V 8SOIC
产品变化通告: Product Discontinuation 09/Jan/2008
标准包装: 2,500
类型: 切换式电容器(充电泵)
输出类型: 固定
输出数: 1
输出电压: 15V
输入电压: 7 V ~ 15 V
频率 - 开关: 1.3MHz
电流 - 输出: 20mA
同步整流器:
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
供应商设备封装: 8-SOICN
NIS6201
OPERATING DESCRIPTION
DC Input
The Vcc pin is rated for a maximum dc voltage of 15
volts. An internal shunt diode is included for applications
where the voltage may exceed 15 volts. For voltages
greater than 15 volts an external shunt resistor must be
added in series with the Vcc pin. This resistor must be sized
NIS6201
such that at low line, the voltage drop across it will allow
8
3
4
6
for an input voltage of greater than that of the output of the
Rbias + 0.50
Rset +
LDO and at high line such that the current into the chip does
not exceed its power rating.
LDO
The internal LDO contains a P ? Channel FET and error
amplifier with a 0.5 volt reference. A voltage divider is
required from the Vreg pin to the comp pin to set the output
of the LDO. This output voltage (Vreg) is the voltage used
for the charge pump oscillator. The divider can be
calculated from the following formulas:
V
Ibias
Ibias is generally in the range of 100 m A to 1 mA and sets
the bias current in the divider.
Rbias(Vreg * 0.50 V)
0.50 V
Vset
0.1uF
Vbias
Figure 6. Bias Voltage Divider
Overcharge Comparator
The overcharge comparator provides a protection
function from an overvoltage condition at turn ? on.
Figure 7 shows a typical configuration for this charge
pump. At turn ? on there is a voltage divider consisting of
two capacitors and two diodes. If this device is being
operated at voltages significantly above the Vreg level, it
is possible to charge the Vreg cap well beyond its intended
level.
V CC
1.25 V
+
?
Regulator
+
?
Overcharge
0.10 V
COMP
1 MHz
Oscillator
V REG
GND
DRIVE
Figure 7. Overcharge Circuit
http://onsemi.com
5
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