参数资料
型号: NLAS5223BMNR2G
厂商: ON Semiconductor
文件页数: 7/11页
文件大小: 0K
描述: IC SWITCH DUAL SPDT 10WQFN
标准包装: 1
功能: 开关
电路: 2 x SPDT
电压电源: 单电源
电压 - 电源,单路/双路(±): 1.65 V ~ 4.5 V
电流 - 电源: 1µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-WFQFN 裸露焊盘
供应商设备封装: 10-WQFN(1.4x1.8)
包装: 剪切带 (CT)
其它名称: NLAS5223BMNR2GOSCT
NLAS5223B, NLAS5223BL
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
VCC
(V)
VIS
(V)
Guaranteed Maximum Limit
Unit
25C
40C to +85C
Min Typ* Max
Min
Max
tON
TurnOn Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 4.5
1.5
50
60
ns
tOFF
TurnOff Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 4.5
1.5
30
40
ns
tBBM
Minimum BreakBeforeMake
Time
VIS = 3.0
RL = 50 W, CL = 35 pF
(Figure 2)
3.0
1.5
2
15
ns
Typical @ 25, VCC = 3.6 V
CIN
Control Pin Input Capacitance
3.5
pF
CNO/NC NO, NC Port Capacitance
60
pF
CCOM
COM Port Capacitance When Switch is Enabled
200
pF
*Typical Characteristics are at 25C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC
(V)
25C
Unit
Typical
BW
Maximum OnChannel 3 dB
Bandwidth or Minimum
Frequency Response
VIN centered between VCC and GND
(Figure 5)
1.65 4.5
19
MHz
VONL
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 5)
1.65 4.5
0.06
dB
VISO
OffChannel Isolation
f = 100 kHz; VIS = 1 V RMS; CL = 5.0 pF
VIN centered between VCC and GND (Figure 5)
1.65 4.5
68
dB
Q
Charge Injection Select Input to
Common I/O
VIN = VCC to GND, RIS = 0 W, CL = 1.0 nF
Q = CL x DVOUT (Figure 6)
1.65 4.5
38
pC
THD
Total Harmonic Distortion
THD + Noise
FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 2.0 V RMS
3.0
0.08
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; VIS = 1.0 V RMS, CL = 5.0 pF, RL = 50 W
VIN centered between VCC and GND (Figure 5)
1.65 4.5
70
dB
10.OffChannel Isolation = 20log10 (VCOM/VNO), VCOM = output, VNO = input to off switch.
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