参数资料
型号: NLAS9431MTR2G
厂商: ON Semiconductor
文件页数: 1/11页
文件大小: 0K
描述: IC SWITCH DUAL DPDT 16WQFN
标准包装: 1
功能: 开关
电路: 2 x DPDT
导通状态电阻: 30 欧姆
电压电源: 单电源
电压 - 电源,单路/双路(±): 2 V ~ 5.5 V
电流 - 电源: 4µA
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-WFQFN 裸露焊盘
供应商设备封装: 16-WQFN(1.8x2.6)
包装: 剪切带 (CT)
其它名称: NLAS9431MTR2GOSCT
Semiconductor Components Industries, LLC, 2008
July, 2008 Rev. 1
1
Publication Order Number:
NLAS9431/D
NLAS9431
Low Voltage Single Supply
Dual DPDT Analog Switch
The NLAS9431 is an advanced dualindependent CMOS double
poledouble throw (DPDT) analog switch fabricated with silicon
gate CMOS technology. It achieves high speed propagation delays
and low ON resistances while maintaining CMOS low power
dissipation. This DPDT controls analog and digital voltages that may
vary across the full powersupply range (from VCC to GND).
The device has been designed so the ON resistance (RON) is much
lower and more linear over input voltage than RON of typical CMOS
analog switches.
The channel select input is compatible with standard CMOS outputs.
The channel select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage input/output voltage mismatch, battery backup,
hot insertion, etc.
The NLAS9431 can also be used as a quad 2to1 multiplexer
demultiplexer analog switch with two Select pins that each controls
two multiplexerdemultiplexers.
Direct Battery Connection
Channel Select Input OverVoltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
BreakBeforeMake Circuitry
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latchup Performance Exceeds 300 mA
Chip Complexity: 158 FETs
16Lead WQFN Package, 1.8 mm x 2.6 mm
This is a PbFree Device
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
BA
= Specific Device Code
M
= Date Code & Assembly Location
G
= PbFree Device
WQFN16
CASE 488AP
http://onsemi.com
BA M
G
16
1
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