参数资料
| 型号： | NLSF302MNR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | IC GATE NOR QUAD CMOS 2INP 16QFN |
| 产品变化通告： | Product Discontinuation 31/Mar/2005 |
| 标准包装： | 3,000 |
| 逻辑类型： | 或非门 |
| 电路数： | 4 |
| 输入数： | 2 |
| 电源电压： | 2 V ~ 5.5 V |
| 电流 - 静态（最大值）： | 2µA |
| 输出电流高，低： | 8mA，8mA |
| 逻辑电平 - 低： | 0.5V |
| 逻辑电平 - 高： | 1.5V |
| 额定电压和最大 CL 时的最大传播延迟： | 7.5ns @ 5V，50pF |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | 16-QFN（3x3） |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
| 其它名称： | NLSF302MNR2OS |
NLSF302
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
VCC
V
TA = 25°C
TA = 40 to 85°C
Unit
Symbol
Min
Typ
Max
Min
Max
Minimum HighLevel
Input Voltage
VIH
2.0
3.0 to 5.5
1.50
VCC x 0.7
1.50
VCC x 0.7
V
Maximum LowLevel
Input Voltage
VIL
2.0
3.0 to 5.5
0.50
VCC x 0.3
0.50
VCC x 0.3
V
Minimum HighLevel
Output Voltage
Vin = VIH or VIL
IOH = 50 mA
VOH
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
V
Vin = VIH or VIL
IOH = 4 mA
IOH = 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
Maximum LowLevel
Output Voltage
Vin = VIH or VIL
IOL = 50 mA
VOL
2.0
3.0
4.5
0.0
0.1
0.1
V
Vin = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
Maximum Input Leakage
Current
Vin = 5.5 V or GND
Iin
0 to 5.5
± 0.1
± 1.0
mA
Maximum Quiescent
Supply Current
Vin = VCC or GND
ICC
5.5
2.0
20.0
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
Parameter
Test Conditions
TA = 25°C
TA = 40 to 85°C
Unit
Symbol
Min
Typ
Max
Min
Max
Maximum Propagation Delay,
Input A or B to Output Y
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
tPLH,
tPHL
5.6
8.1
7.9
11.4
1.0
1.0
9.5
13.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
3.6
5.1
5.5
7.5
1.0
6.5
8.5
Maximum Input Capacitance
Cin
4
10
10
pF
Power Dissipation Capacitance (Note 1)
CPD
Typical @ 25
°C, VCC = 5.0 V
pF
15
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0V)
Characteristic
Symbol
TA = 25°C
Unit
Typ
Max
Quiet Output Maximum Dynamic VOL
VOLP
0.3
0.8
V
Quiet Output Minimum Dynamic VOL
VOLV
0.3
0.8
V
Minimum High Level Dynamic Input Voltage
VIHD
3.5
V
Maximum Low Level Dynamic Input Voltage
VILD
1.5
V
Figure 3. Switching Waveforms
VCC
GND
50%
50% VCC
A or B
Y
tPHL
tPLH
*Includes all probe and jig capacitance
Figure 4. Test Circuit
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 5. Input Equivalent Circuit
INPUT
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相关代理商/技术参数 |
参数描述 |
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| NLSF302MNR2G | 功能描述:逻辑门 LOG QUAD 2-INPUT NOR RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| NLSF308 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Quad 2−Input AND Gate |
| NLSF308/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Quad 2-Input AND Gate |
| NLSF308_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Quad 2−Input AND Gate |
| NLSF308MNR2 | 功能描述:逻辑门 LOG QUAD 2 INPUT AND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
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