参数资料
| 型号： | NLSF3T126MNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | IC BUS BUFFER TRI-ST QUAD 16QFN |
| 标准包装： | 1 |
| 逻辑类型： | 缓冲器/线路驱动器，非反相 |
| 元件数： | 4 |
| 每个元件的位元数： | 1 |
| 输出电流高，低： | 8mA，8mA |
| 电源电压： | 2 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN（3x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NLSF3T126MNR2GOSCT |
NLSF3T126
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Parameter
Test Conditions
Symbol
TA = 25°C
TA = ≤ 85°C
TA ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
Maximum Propagation Delay,
A to Y
VCC = 2.3 ± 0.3 V CL = 15 pF
tPLH,
tPHL
1.0
14.5
16.9
1.0
18.1
1.0
19.2
ns
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
1.0
5.6
8.1
8.0
11.5
1.0
9.5
13.0
1.0
12.0
16.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
1.0
1.0
3.8
5.3
5.5
7.5
1.0
6.5
8.5
1.0
1.0
8.5
10.5
Maximum Output
Enable TIme, OE to Y
VCC = 2.3 ± 0.3 V CL = 15 pF
tPZL,
tPZH
1.0
14.8
16.2
1.0
17.4
1.0
19.3
ns
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
1.0
5.4
7.9
8.0
11.5
1.0
9.5
13.0
1.0
11.5
15.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
1.0
3.6
5.1
5.1
7.1
1.0
6.0
8.0
1.0
7.5
9.5
Maximum Output
Disable Time, OE to Y
VCC = 2.3 ± 0.3 V CL = 15 pF
tPLZ,
tPHZ
1.0
15.4
18.0
1.0
19.8
1.0
22.0
ns
VCC = 3.3 ± 0.3 V CL = 50 pF
RL = 1.0 kW
1.0
9.5
13.2
1.0
15.0
1.0
18.0
ns
VCC = 5.0 ± 0.5 V CL = 50 pF
RL = 1.0 kW
1.0
6.1
8.8
1.0
10.0
1.0
12.0
ns
OutputtoOutput Skew
VCC = 3.3 ± 0.3 V CL = 50 pF
(Note 1)
tOSLH,
tOSHL
1.5
1.5
2.0
ns
VCC = 5.0 ± 0.5 V CL = 50 pF
(Note 1)
1.0
1.0
1.5
Maximum Input Capacitance
Cin
4.0
10
10
10
pF
Maximum 3State Output
Capacitance
(Output in High Impedance
State)
Cout
6.0
pF
Power Dissipation Capacitance (Note 2)
CPD
Typical @ 25
°C, VCC = 5.0 V
pF
15
1. Parameter guaranteed by design. tOSLH = |tPLHm tPLHn|, tOSHL = |tPHLm tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per buffer). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
Characteristic
Symbol
TA = 25°C
Unit
Typ
Max
Quiet Output Maximum Dynamic VOL
VOLP
0.3
0.8
V
Quiet Output Minimum Dynamic VOL
VOLV
0.3
0.8
V
Minimum High Level Dynamic Input Voltage
VIHD
3.5
V
Maximum Low Level Dynamic Input Voltage
VILD
1.5
V
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