参数资料
型号: NLX3G17CMX1TCG
厂商: ON Semiconductor
文件页数: 6/11页
文件大小: 0K
描述: IC BUFFER TRPL SCHMT TRG 8ULLGA
标准包装: 3,000
逻辑类型: 缓冲器/线路驱动器,非反相
元件数: 3
每个元件的位元数: 1
输出电流高,低: 32mA,32mA
电源电压: 1.65 V ~ 5.5 V
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-XFLGA
供应商设备封装: 8-ULLGA(1.45x1)
包装: 带卷 (TR)
NLX3G17
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
VCC
(V)
Test
Condition
TA = 25 5C
TA = +855C
TA = 555C to
+1255C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Propagation
Delay Input A to
Output
2.3 to 2.7
RL = 1 MW,
CL = 15 pF
1.8
4.3
7.4
1.8
8.1
1.8
9.1
ns
3.0 to 3.6
RL = 1 MW,
CL = 15 pF
1.5
3.3
5.0
1.5
5.5
1.5
6.5
RL = 500 W,
CL = 50 pF
1.8
4.0
5.0
1.8
6.6
1.8
7.6
4.5 to 5.5
RL = 1 MW,
CL = 15 pF
1.0
2.7
4.1
1.0
4.5
1.0
5.5
RL = 500 W,
CL = 50 pF
1.2
3.2
4.9
1.2
5.4
1.2
6.4
CIN
Input
Capacitance
5.5
VIN = 0 V or VCC
7.0
pF
CPD
Power
Dissipation
Capacitance
(Note 6)
3.3
5.5
10 MHz
VIN = 0 V or VCC
9.0
11
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noload
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
Figure 3. Switching Waveforms
Figure 4. Test Circuit
PULSE
GENERATOR
RT
DUT
VCC
RL
CL
RT = ZOUT of pulse generator (typically 50 W)
VCC
GND
50%
50% VCC
A or B
Y
tPHL
tPLH
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