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参数资料
| 型号： | NP100P06PLG-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH -60V MP-25ZP/TO-263 |
| 标准包装： | 800 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 300nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 15000pF @ 10V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 带卷 (TR) |
NP100P06PLG
-300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-1000
V DS = ? 10V
-250
-200
V GS = ? 10 V
-100
-10
Pulsed
-150
-100
-50
0
? 4.5 V
Pulsed
-1
-0.1
-0.01
-0.001
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
125 ° C
150 ° C
175 ° C
0
-0.5
-1
-1.5
-2
0
-1
-2
-3
-4
-5
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
1000
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-2.5
-2
-1.5
100
10
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
-1
-0.5
V DS = ? 10 V
I D = ? 1 mA
1
V DS = ? 10 V
Pulsed
125 ° C
150 ° C
175 ° C
0
0.1
-75
-25
25
75
125
175
225
-0.1
-1
-10
-100
-1000
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
16
I D = ? 100 A
6
4
V GS = ? 4.5 V
? 10 V
12
8
? 50 A
? 20 A
2
0
Pulsed
4
0
Pulsed
-1
-10
-100
-1000
0
-5
-10
-15
-20
4
I D - Drain Current - A
Data Sheet D18695EJ3V0DS
V GS - Gate to Source Voltage - V
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