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参数资料
| 型号： | NP100P06PLG-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH -60V MP-25ZP/TO-263 |
| 标准包装： | 800 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 300nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 15000pF @ 10V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 带卷 (TR) |
NP100P06PLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
C iss
8
V GS = ? 4.5 V
10000
C oss
6
4
2
0
? 10 V
I D = ? 50 A
Pulsed
1000
100
V GS = 0 V
f = 1 MHz
C rss
-75
-25
25
75
125
175
225
-0.1
-1
-10
-100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
-60
-12
t d(off)
-50
V DD = ? 48 V
? 30 V
-10
100
t f
-40
? 12 V
-8
t r
t d(on)
-30
-6
10
-20
V GS
-4
1
V DD = ? 30 V
V GS = ? 10 V
R G = 0 Ω
-10
0
V DS
I D = ? 100 A
-2
-0
-0.1
-1
-10
-100
-1000
0
50
100
150
200
250
300
350
-1000
-100
I D - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-10
V GS = ? 10 V
0V
100
-1
10
-0.1
-0.01
Pulsed
1
di/dt = ? 100 A/ μ s
V GS = 0 V
0
0.5
1
1.5
-0.1
-1
-10
-100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D18695EJ3V0DS
I F - Diode Forward Current - A
5
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