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参数资料
| 型号： | NP109N04PUJ-E1B-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 9/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V MP-25ZP/TO-263 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.3 毫欧 @ 55A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 180nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10350pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 带卷 (TR) |
NP109N04PUJ
TAPE INFORMATION
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
MARKING INFORMATION
?
NEC
109N04
UJ
?
Pb-free plating marking
Abbreviation of part number
Lot code
Reel side
RECOMMENDED SOLDERING CONDITIONS
The NP109N04PUJ should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Partial heating
Soldering Conditions
Maximum temperature (Package's surface temperature): 260 ° C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220 ° C: 60 seconds or less
Preheating time at 160 to 180 ° C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350 ° C or below
Recommended
Condition Symbol
IR60-00-3
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19728EJ1V0DS
7
相关PDF资料 |
PDF描述 |
|---|---|
| NP109N055PUJ-E1B-AY | MOSFET N-CH 55V MP-25ZP/TO-263 |
| NP110N03PUG-E1-AY | MOSFET N-CH 30V MP-25ZP/TO-263 |
| NP110N04PDG-E1-AY | MOSFET N-CH 40V MP-25ZP/TO-263 |
| NP110N04PUG-E1-AY | MOSFET N-CH 40V MP-25ZP/TO-263 |
| NP110N04PUJ-E1B-AY | MOSFET N-CH 40V MP-25ZP/TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP109N04PUJ-E2B-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP109N04PUK | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP109N04PUK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 110A T/R 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 40V, TO263ZP - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 110A TO-263 |
| NP109N04PUK-E2-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP109N055PUJ-E1B-AY | 功能描述:MOSFET N-CH 55V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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