参数资料
| 型号： | NP1800SCMCT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC TSPD SURGE DEVICE 150MA SMB |
| 产品变化通告： | Product Discontinuation 19/Jul/2012 |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 220V |
| 电压 - 断路： | 170V |
| 电压 - 导通状态： | 4V |
| 电流 - 峰值脉冲(8 x 20µs)： | 400A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 33pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
NPMC Series
TEL ? COM STANDARDS
Waveform
x = series ratings
GR ? 1089 ? CORE
TIA ? 968 ? A
GR ? 1089 ? CORE
TIA ? 968 ? A
ITU ? T K.20/21
GR ? 1089 ? CORE
Specification
Voltage (m s)
2x10
10x160
10x360
10x560
10x700
10x1000
Current (m s)
2x10
10x160
10x360
10x560
5x310
10x1000
A
150
90
75
50
75
50
B
250
150
125
100
100
80
C
500
200
175
150
200
100
Unit
A(pk)
SURGE RATINGS
Characteristics
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 1, 2 and 3)
2 x 10 m Sec
8 x 20 m Sec
10 x 160 m Sec
10 x 360 m Sec
10 x 560 m Sec
10 x 700 m Sec
10 x 1000 m Sec
Symbol
I PPS1
I PPS2
I PPS3
I PPS4
I PPS5
I PPS6
I PPS7
A
150
150
90
75
50
75
50
B
250
250
150
125
100
100
80
C
500
400
200
150
150
200
100
Unit
A(pk)
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
3. Nominal values may not represent the maximum capability of a device.
CAPACITANCE
Max
Characteristics
Symbol
A
B
C
Unit
(f=1.0 MHz, 1.0 V rms , 2 Vdc bias)
(C o Apx 45% @ 50 V)
NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
C o
23
23
23
23
23
23
23
23
23
23
23
23
29
29
29
29
29
29
29
29
29
29
29
29
33
33
33
33
33
33
33
33
33
33
33
33
pF
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Symbol
Rating
Value
Unit
V DRM
Repetitive peak off ? state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off ? state conditions including all dc and repetitive
alternating voltage components.
NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
± 58
± 65
± 75
V
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
± 90
± 120
± 140
± 170
± 180
(Stresses exceeding Maximum Ratings may damage
the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended
Operating Conditions is not implied. Extended
exposure to stresses above the Recommended
Operating Conditions may affect device reliability.)
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
± 190
± 220
± 275
± 320
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP1800SCT3G | 功能描述:硅对称二端开关元件 100A 180V TSPD SMB RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP1800SDMCT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current TSPD |
| NP1808 | 制造商:YAGEO 制造商全称:YAGEO Corporation 功能描述:SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS |
| NP180N04TUG-E1-AY | 功能描述:MOSFET N-CH 40V 180A TO-263-7 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP180N04TUG-E2-AY | 制造商:Renesas Electronics Corporation 功能描述: |
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