参数资料
| 型号： | NP1800SCMCT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | IC TSPD SURGE DEVICE 150MA SMB |
| 产品变化通告： | Product Discontinuation 19/Jul/2012 |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 220V |
| 电压 - 断路： | 170V |
| 电压 - 导通状态： | 4V |
| 电流 - 峰值脉冲(8 x 20µs)： | 400A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 33pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
NPMC Series
ELECTRICAL CHARACTERISTICS TABLE (T A = 25 ° C unless otherwise noted)
Symbol
V (BO)
Rating
Breakover voltage: The maximum voltage across the device in or at the
breakdown region. (Note 4)
VDC = 1000 V, dv/dt = 100 V/ m s
NP0640SxMCT3G
NP0720SxMCT3G
Min
Typ
Max
± 77
± 88
Unit
V
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
± 98
± 130
± 160
± 180
± 220
± 240
± 260
± 300
± 350
± 400
I (BO)
I H
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: Minimum current required to maintain the device in the on ? state. (Notes 5, 6)
150
800
mA
mA
I DRM
Off ? state Current: The dc value of current that results from the applica-
tion of the off ? state voltage
V D = 50 V
V D = V DRM
2
5
m A
V T
di/dt
On ? state Voltage: The voltage across the device in the on ? state condition.
I T = 2.2 A (pk), PW = 300 m s, DC = 2%
Critical rate of rise of on ? state current: rated value of the rate of rise of current which the device
can withstand without damage.
4
± 500
V
A/ m s
4. Electrical parameters are based on pulsed test methods.
5. Measured under pulsed conditions to reduce heating
6. Allow cooling before testing second polarity.
THERMAL CHARACTERISTICS
Symbol
T STG
T J
R 0JA
Rating
Storage Temperature Range
Junction Temperature
Thermal Resistance: Junction ? to ? Ambient Per EIA/JESD51 ? 3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
Value
? 65 to +150
? 40 to +150
90
Unit
° C
° C
° C/W
http://onsemi.com
3
相关PDF资料 |
PDF描述 |
|---|---|
| NP2100SCMCT3G | IC TSPD SURGE PROTECT 100A SMB |
| NP2100SBMCT3G | IC TSPD SURGE DEVICE 80A SMB |
| NP2600SBMCT3G | IC TSPD SURGE DEVICE 80A SMB |
| NP3500SCMCT3G | IC TSPD SURGE DEVICE 100A SMB |
| 929838-04-16-RK | CONN HEADER .100 DUAL R/A 32POS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP1800SCT3G | 功能描述:硅对称二端开关元件 100A 180V TSPD SMB RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP1800SDMCT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current TSPD |
| NP1808 | 制造商:YAGEO 制造商全称:YAGEO Corporation 功能描述:SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS |
| NP180N04TUG-E1-AY | 功能描述:MOSFET N-CH 40V 180A TO-263-7 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP180N04TUG-E2-AY | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。