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| 型号： | NP55N055SDG-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 55A TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 28A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 96nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4800pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N055SDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The NP55N055SDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
? Channel temperature 175 degree rating
? Super low on-state resistance
R DS(on)1 = 9.5 m ? MAX. (V GS = 10 V, I D = 28 A)
? Low C iss : C iss = 3200 pF TYP.
? Logic level drive type
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
NP55N055SDG
PACKAGE
TO-252 (MP-3ZK)
(TO-252)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
55
±20
±55
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±220
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
77
1.2
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
27
73
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch < 150 ° C, V DD = 28 V, R G = 25 ? , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.95
125
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16864EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
The mark
shows major revised points.
Printed in Japan
2004
相关PDF资料 |
PDF描述 |
|---|---|
| NP55N055SUG-E1-AY | MOSFET N-CH 55V 55A TO-252 |
| NP60N03KUG-E1-AY | MOSFET N-CH 30V 60A TO-263 |
| NP60N03SUG-E1-AY | MOSFET N-CH 30V 60A TO-252 |
| NP60N04KUG-E1-AY | MOSFET N-CH 40V 60A TO-263 |
| NP60N04MUG-S18-AY | MOSFET N-CH 40V 60A TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP55N055SDG-E1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 55V 55A 3-Pin(2+Tab) TO-252 T/R |
| NP55N055SUG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| NP55N055SUG-E1-AY | 功能描述:MOSFET N-CH 55V 55A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP55N055SUG-E1-AY/K | 制造商:Renesas Electronics Corporation 功能描述: |
| NP55N06CLD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-220AB |
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