参数资料
型号: NP80N03MLE-S18-AY
厂商: Renesas Electronics America
文件页数: 4/12页
文件大小: 0K
描述: MOSFET N-CH 30V 80A TO-220
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 40A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 72nC @ 10V
输入电容 (Ciss) @ Vds: 3900pF @ 25V
功率 - 最大: 1.8W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
V DSS
V GSS
30
± 20
V
V
Drain Current (DC) (T C = 25 ° C)
Note1
I D(DC)
± 80
A
Drain Current (Pulse)
Note2
I D(pulse)
± 320
A
Total Power Dissipation (T A = 25 ° C)
Total Power Dissipation (T C = 25 ° C)
Channel Temperature
Storage Temperature
P T
P T
T ch
T stg
1.8
120
175
? 55 to + 175
W
W
° C
° C
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I AS
E AS
50/40/9
2.5/160/400
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μ s, Duty cycle ≤ 1%
3. Starting T ch = 25 ° C, R G = 25 Ω , V GS = 20 → 0 V (see Figure 4. )
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.25
83.3
° C/W
° C/W
2
Data Sheet D14032EJ5V0DS
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