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参数资料
| 型号： | NP80N03MLE-S18-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 80A TO-220 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 72nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3900pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I DSS
I GSS
V GS(th)
| y fs |
R DS(on)1
R DS(on)2
R DS(on)3
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G1
Q G2
Q GS
Q GD
V F(S-D)
t rr
Q rr
TEST CONDITIONS
V DS = 30 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
V DS = 10 V, I D = 40 A
V GS = 10 V, I D = 40 A
V GS = 5 V, I D = 40 A
V GS = 4.5 V, I D = 40 A
V DS = 25 V,
V GS = 0 V,
f = 1 MHz
V DD = 15 V, I D = 40 A,
V GS = 10 V,
R G = 1 Ω
V DD = 24 V, V GS = 10 V, I D = 80 A
V DD = 24 V,
V GS = 5 V,
I D = 80 A
I F = 80 A, V GS = 0 V
I F = 80 A, V GS = 0 V,
di/dt = 100 A/ μ s
MIN.
1.5
20
TYP.
2.0
41
5.3
6.8
7.5
2600
590
270
20
12
60
14
48
28
10
14
1.0
34
22
MAX.
10
± 10
2.5
7.0
9.0
11
3900
890
490
44
31
120
35
72
42
UNIT
μ A
μ A
V
S
m Ω
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = 20 → 0 V
D.U.T.
R G = 25 Ω
50 Ω
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
V DS
10%
V GS
90%
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
PG.
50 Ω
V DD
Data Sheet D14032EJ5V0DS
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP80N03NDE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N03NDE-S18-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N03NLE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N03NLE-S18-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N04CHE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 80A I(D) | TO-220AB |
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