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参数资料
| 型号： | NP80N04PLG-E1B-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 80A TO-263 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 135nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6900pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 标准包装 |
| 其它名称： | NP80N04PLG-E1B-AYDKR |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04MLG, NP80N04NLG, NP80N04PLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for
high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04MLG-S18-AY
Note
LEAD PLATING
PACKING
Tube
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
NP80N04NLG-S18-AY
NP80N04PLG-E1B-AY
NP80N04PLG-E2B-AY
Note
Note
Note
Pure Sn (Tin)
50 p/tube
Tape
1000 p/reel
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
? Logic level
? Built-in gate protection diode
? Super low on-state resistance
- NP80N04MLG, NP80N04NLG
R DS(on)1 = 4.8 m Ω MAX. (V GS = 10 V, I D = 40 A)
R DS(on)2 = 9.0 m Ω MAX. (V GS = 4.5 V, I D = 35 A)
- NP80N04PLG
R DS(on)1 = 4.5 m Ω MAX. (V GS = 10 V, I D = 40 A)
R DS(on)2 = 8.7 m Ω MAX. (V GS = 4.5 V, I D = 35 A)
? High current rating
I D(DC) = ± 80 A
? Low input capacitance
(TO-220)
(TO-262)
(TO-263)
C iss = 4600 pF TYP.
? Designed for automotive application and AEC-Q101 qualified
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19797EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP80N04PLG-E2B-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N04PUG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N04PUG-E1B-AY | 功能描述:MOSFET N-CH 40V 80A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP80N04PUG-E2B-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N055 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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