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参数资料
| 型号： | NP80N055NLE-S18-AY |
| 厂商： | NEC Corp. |
| 元件分类： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率场效应晶体管 |
| 文件页数： | 1/10页 |
| 文件大小： | 223K |
| 代理商： | NP80N055NLE-S18-AY |
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MOS FIELD EFFECT TRANSISTOR
NP80N055ELE, NP80N055KLE
NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2002, 2007
Document No. D14097EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP80N055ELE-E1-AY
Note1, 2
NP80N055ELE-E2-AY
Note1, 2
TO-263 (MP-25ZJ) typ. 1.4 g
NP80N055KLE-E1-AY
Note1
NP80N055KLE-E2-AY
Note1
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP80N055CLE-S12-AZ
Note1, 2
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
NP80N055DLE-S12-AY
Note1, 2
TO-262 (MP-25 Fin Cut) typ. 1.8 g
NP80N055MLE-S18-AY
Note1
TO-220 (MP-25K) typ. 1.9 g
NP80N055NLE-S18-AY
Note1
Pure Sn (Tin)
Tube
50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)1
= 11 m
Ω
MAX. (V
GS
= 10 V, I
D
= 40 A)
R
DS(on)2
= 13 m
Ω
MAX. (V
GS
= 5 V, I
D
= 40 A)
R
DS(on)3
= 15 m
Ω
MAX. (V
GS
= 4.5 V, I
D
= 40 A)
Low input capacitance
C
iss
= 2900 pF TYP.
Built-in gate protection diode
(TO-220)
(TO-262)
(TO-263)
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| NP80N055CLE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N055DLE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N055 | Switching N-channel power MOS FET industrial use |
| NP80N055CLE | Switching N-channel power MOS FET industrial use |
| NP80N055DLE | Switching N-channel power MOS FET industrial use |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP80N055PDG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N055PDG-E1B-AY | 功能描述:MOSFET N-CH 55V 80A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP80N055PDG-E2B-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06MLG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06MLG-S18-AY | 功能描述:MOSFET N-CH 60V 80A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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