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参数资料
| 型号： | NP80N055NLE-S18-AY |
| 厂商： | NEC Corp. |
| 元件分类： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率场效应晶体管 |
| 文件页数： | 9/10页 |
| 文件大小： | 223K |
| 代理商： | NP80N055NLE-S18-AY |
Data Sheet D14097EJ6V0DS
9
NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel side
Draw-out side
MARKING INFORMATION
80N055
LE
Lot code
NEC
Pb-free plating marking
Abbreviation of part number
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
MP-25ZJ, MP-25ZK
Maximum temperature (Package's surface temperature): 260
°
C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220
°
C: 60 seconds or less
Preheating time at 160 to 180
°
C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Wave soldering
MP-25, MP-25K, MP-25SK,
MP-25 Fin Cut
Maximum temperature (Solder temperature): 260
°
C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
Partial heating
MP-25ZJ, MP-25ZK,
MP-25K, MP-25SK
Maximum temperature (Pin temperature): 350
°
C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Partial heating
MP-25, MP-25 Fin Cut
Maximum temperature (Pin temperature): 300
°
C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P300
Caution Do not use different soldering methods together (except for partial heating).
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相关PDF资料 |
PDF描述 |
|---|---|
| NP80N055CLE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N055DLE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP80N055 | Switching N-channel power MOS FET industrial use |
| NP80N055CLE | Switching N-channel power MOS FET industrial use |
| NP80N055DLE | Switching N-channel power MOS FET industrial use |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP80N055PDG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N055PDG-E1B-AY | 功能描述:MOSFET N-CH 55V 80A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP80N055PDG-E2B-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06MLG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06MLG-S18-AY | 功能描述:MOSFET N-CH 60V 80A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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