参数资料
型号: NP82N04PUG-E1-AZ
厂商: Renesas Electronics America
文件页数: 4/9页
文件大小: 0K
描述: MOSFET N-CH 40V 82A TO-263
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 82A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.5 毫欧 @ 41A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 160nC @ 10V
输入电容 (Ciss) @ Vds: 9750pF @ 25V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263
包装: 带卷 (TR)
NP82N04PUG
ELECTRICAL CHARACTERISTICS (T A = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
I DSS
I GSS
TEST CONDITIONS
V DS = 40 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
MIN.
TYP.
MAX.
1
± 100
UNIT
μ A
nA
Gate to Source Threshold Voltage
Note
Forward Transfer Admittance
Note
V GS(th)
| y fs |
V DS = V GS , I D = 250 μ A
V DS = 10 V, I D = 41 A
2.0
20
3.0
41
4.0
V
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Note
R DS(on)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V GS = 10 V, I D = 41 A
V DS = 25 V
V GS = 0 V
f = 1 MHz
V DD = 20 V, I D = 41 A
V GS = 10 V
R G = 0 ?
V DD = 32 V
V GS = 10 V
I D = 82 A
2.7
6500
580
370
39
102
67
13
106
29
35
3.5
9750
870
670
90
260
140
40
160
m ?
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 82 A, V GS = 0 V
I F = 82 A, V GS = 0 V
di/dt = 100 A/ μ s
0.9
43
51
1.5
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 ?
50 ?
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
2
PG.
50 ?
V DD
Data Sheet D16858EJ1V0DS
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