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参数资料
| 型号： | NP83P06PDG-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH -60V 83A TO-263 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 83A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.8 毫欧 @ 41.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 190nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10100pF @ 10V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 标准包装 |
| 其它名称： | NP83P06PDG-E1-AYDKR |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP83P06PDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP83P06PDG-E1-AY
Note
LEAD PLATING
PACKING
PACKAGE
NP83P06PDG-E2-AY
Note
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
? Super low on-state resistance
R DS(on)1 = 8.8 m Ω MAX. (V GS = ? 10 V, I D = ? 41.5 A)
R DS(on)2 = 12 m Ω MAX. (V GS = ? 4.5 V, I D = ? 41.5 A)
? High current rating: I D(DC) = m 83 A
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-263)
Drain Current (pulse)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
V DSS
V GSS
I D(DC)
I D(pulse)
P T1
P T2
T ch
T stg
? 60
m 20
m 83
m 249
150
1.8
175
? 55 to + 175
V
V
A
A
W
W
° C
° C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
49
240
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = ? 30 V, R G = 25 Ω , V GS = ? 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.0
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18691EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP83P06PDG-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP83W | 制造商:Hubbell Premise Wiring 功能描述: 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 3-G, 3) DUP, WH |
| NP84 | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 4-G, 4) DUP, BR |
| N-P84 | 功能描述:烙铁 Nozzle N-P84 OTHER REWORK RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included |
| NP84AL | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 4-G, 4) DUP, AL |
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