参数资料
型号: NP83P06PDG-E1-AY
厂商: Renesas Electronics America
文件页数: 7/9页
文件大小: 0K
描述: MOSFET P-CH -60V 83A TO-263
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 83A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.8 毫欧 @ 41.5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 190nC @ 10V
输入电容 (Ciss) @ Vds: 10100pF @ 10V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263
包装: 标准包装
其它名称: NP83P06PDG-E1-AYDKR
NP83P06PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
15
V GS = ? 4.5 V
10000
C iss
10
5
0
? 10V
I D = ? 41.5 A
Pulsed
1000
100
V GS = 0 V
f = 1 MHz
C oss
C rss
-75
-25
25
75
125
175
225
-0.1
-1
-10
-100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
t d(off)
-60
-12
100
t f
-50
-40
V DD = ? 48 V
? 30 V
? 12 V
-10
-8
t d(on)
-30
-6
10
t r
-20
V GS
-4
1
V DD = ? 30 V
V GS = ? 10 V
R G = 0 Ω
-10
0
V DS
I D = ? 83 A
-2
0
-0.1
-1
-10
-100
0
40
80
120
160
200
-1000
I D - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-100
100
-10
V GS = ? 10 V
0V
-1
-0.1
-0.01
Pulsed
10
1
di/dt = ? 100 A/ μ s
V GS = 0 V
0
0.5
1
1.5
-0.1
-1
-10
-100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D18691EJ3V0DS
I F - Diode Forward Current - A
5
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