参数资料
型号: NP88N055DLE-S12-AY
元件分类: JFETs
英文描述: 88 A, 55 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: LEAD FREE, MP-25, TO-262, 3 PIN
文件页数: 7/10页
文件大小: 207K
代理商: NP88N055DLE-S12-AY
Data Sheet D13933EJ7V0DS
6
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature -
°C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure15. SWITCHING CHARACTERISTICS
0
50
2
1
4
3
6
5
0
50
100
150
ID = 44 A
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
8
7
9
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS = 10 V
1.0
IF
-
Diode
Forward
Current
-
A
0
1.5
VF(S-D) - Source to Drain Voltage - V
0.5
Pulsed
VGS = 10 V
0 V
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
0.1
1000
10000
100000
1
10
100
VGS = 0 V
f = 1 MHz
100
1000
10
100
Coss
Crss
tf
tr
td(on)
td(off)
Ciss
V
GS
-
Gate
to
Source
Voltage
-
V
IF - Diode Forward Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
μs
VGS = 0 V
1
0.1
10
1.0
10
100
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
40
60
20
80
100
120
140 160
20
40
60
80
100
2
0
4
VDS
1000
100
6
8
10
VGS
VDD = 44 V
ID = 88 A
VDD = 28 V
VGS = 10 V
RG = 1
Ω
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