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参数资料
| 型号： | NP88N055DLE-S12-AY |
| 元件分类： | JFETs |
| 英文描述： | 88 A, 55 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | LEAD FREE, MP-25, TO-262, 3 PIN |
| 文件页数： | 9/10页 |
| 文件大小： | 207K |
| 代理商： | NP88N055DLE-S12-AY |
Data Sheet D13933EJ7V0DS
8
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
5)TO-220 (MP-25K)
6)TO-262 (MP-25SK)
4
2.8
±
0.3
10.0
± 0.2
3.8
± 0.2
φ
6.3
±
0.3
4.45
± 0.2
1.3
± 0.2
0.8
± 0.1
0.5
± 0.2
2.5
± 0.2
1.27
± 0.2
3.1
±
0.2
15.9
MAX.
12 3
13.7
±
0.3
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4
12 3
10.0
± 0.2
4.45
± 0.2
1.3
± 0.2
13.7
±
0.3
0.8
± 0.1
1.27
± 0.2
0.5
± 0.2
2.5
± 0.2
2.54 TYP.
1.2
±
0.3
8.9
±
0.2
10.1
±
0.3
3.1
±
0.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP88N055EHE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 88A I(D) | TO-263AB |
| NP88N055EHE-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055EHE-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055ELE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 88A I(D) | TO-263AB |
| NP88N055ELE-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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