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参数资料
| 型号： | NRVB120ESFT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 105K |
| 描述： | DIODE SCHOTTKY 1A 20V SOD-123 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 20V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 530mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 20V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123 |
| 供应商设备封装： | SOD-123 |
| 包装： | 带卷 (TR) |
    MBR120ESF, NRVB120ESF http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 20 V Average Rectified Forward Current (At Rated VR, TL = 140 °C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 125 °C) IFRM 2.0 A Non?Repetitive Peak Surge Current (Non?Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg ?65 to 150 °C Operating Junction Temperature TJ ?65 to 150 °C Voltage Rate of Change (Rated VR, TJ = 25 °C) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance ? Junction ?to?Lead (Note 1) Thermal Resistance ? Junction ?to?Lead (Note 2) Thermal Resistance ? Junction ?to?Ambient (Note 1) Thermal Resistance ? Junction ?to?Ambient (Note 2) R R tjl R tjl R tja tja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4.2 ). 2. Mounted with 1 in. copper pad (Cu area 700 mm ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 VF TJ = 25 °C TJ = 100 °C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.455 0.530 0.595 0.360 0.455 0.540 Maximum Instantaneous Reverse Current (Note 3), See Figure 4 IR TJ = 25 °C TJ = 100 °C A (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 10 1.0 0.5 1600 500 300 3. Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤ 2%. |
相关PDF资料 |
PDF描述 |
|---|---|
| NRVB120LSFT1G | DIODE SCHOTTKY 1A 20V SOD-123 |
| NRVB130T1G | DIODE SCHOTTKY 1A 30V SOD-123 |
| NRVB140SFT1G | DIODE SCHOTTKY 1A 40V SOD-123 |
| NRVBA130LT3G | DIODE SCHOTTKY 1A 30V SMA |
| NRVBA140T3G | DIODE SCHOTTKY 1A 40V SMA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NRVB120ESFT3G | 功能描述:肖特基二极管与整流器 SCHOTTKY RECT SOD123 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NRVB120LSFT1G | 功能描述:肖特基二极管与整流器 1A, 20 V SCHOTTKY RECT RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NRVB130T1G | 功能描述:肖特基二极管与整流器 1A 30V SCHOTTKY RECT RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NRVB140SF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| NRVB140SFT1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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