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参数资料
| 型号： | NRVBA1H100T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 126K |
| 描述： | DIODE SCHOTTKY 1A 100V SMA |
| 标准包装： | 5,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 760mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 40µA @ 100V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 带卷 (TR) |
    MBRA1H100T3G, NRVBA1H100T3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 100 V Average Rectified Forward Current (TL = 167 ?C) IO 1.0 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Storage and Operating Junction Temperature Range (Note 1) Tstg, TJ ?65 to +175 ?C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction?to?Lead (Note 2) JCL 14 ?C/W Thermal Resistance, Junction?to?Ambient (Note 2) RJA 75 ?C/W Thermal Resistance, Junction?to?Ambient (Note 3) RJA 280 ?C/W 2. Mounted with 700 mm2 copper pad size (Approximately 1 in 2) 1 oz FR4 Board. 2 copper, 1 oz FR4 Board. 3. Mounted with pad size approximately 6 mm ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, T J = 25 ?C) (IF = 2.0 A, T J = 25 ?C) (IF = 1.0 A, T J = 125 ?C) (IF = 2.0 A, T J = 125 ?C) VF 0.76 0.84 0.61 0.68 V Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25 ?C) (Rated dc Voltage, TJ = 125 ?C) IR 40 0.5 A mA 4. Pulse Test: Pulse Width ? 380 s, Duty Cycle ? 2.0%. |
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相关代理商/技术参数 |
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| NRVBA210LT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
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| NRVBA340T3G | 功能描述:DIODE SCHOTTKY 3A 40V SMA RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| NRVBB1045T4 | 制造商:ON Semiconductor 功能描述:REC D2PAK 10A 45V SHTKY - Tape and Reel |
| NRVBB1045T4G | 制造商:ON Semiconductor 功能描述:REC D2PAK 10A 45V SHTKY - Tape and Reel |
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