参数资料
型号: NRVBS2040LT3G
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 175K
描述: DIODE SCHOTTKY 2A 40V SMB
标准包装: 2,500
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 2A
电压 - 在 If 时为正向 (Vf)(最大): 430mV @ 2A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 100µA @ 20V
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: SMB
包装: 带卷 (TR)
MBRS2040LT3G, NRVBS2040LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
40
V
Average Rectified Forward Current
(At Rated VR, TC
= 103
?C)
IO
2.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC
= 104
?C)
IFRM
4.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
70
A
Storage Temperature
Tstg, TC
?55 to +150
?C
Operating Junction Temperature
TJ
?55 to +125
?C
Voltage Rate of Change
(Rated VR, TJ
= 25
?C)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction?to?Lead (Note 1)
Thermal Resistance — Junction?to?Ambient (Note 2)
R?
R
JL
?JA
22.5
78
?C/W
1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage
(Note 3)
see Figure 2
(IF
= 2.0 A)
(IF
= 4.0 A)
VF
TJ
= 25
?C
TJ
= 125
?C
Volts
0.43
0.50
0.34
0.45
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(VR
= 40 V)
(VR
= 20 V)
IR
TJ
= 25
?C
TJ
= 100
?C
mA
0.8
0.1
20
6.0
3. Pulse Test: Pulse Width ?
250
?s, Duty Cycle ?
2.0%.
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