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参数资料
| 型号： | NS6A5.0AT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS 600W 5V UNIDIRECT SMA |
| 标准包装： | 5,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.4V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 带卷 (TR) |
NS6A5.0AT3G
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ° C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ° C
Measured Zero Lead Length (Note 2)
Derate Above 75 ° C
Thermal Resistance from Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ° C
Derate Above 25 ° C
Thermal Resistance from Junction ? to ? Ambient
Forward Surge Current (Note 4) @ T A = 25 ° C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
I FSM
T J , T stg
Value
600
1.5
20
50
0.5
4.0
250
40
? 65 to +150
Unit
W
W
mW/ ° C
° C/W
W
mW/ ° C
° C/W
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive.
2. 1 in square copper pad, FR ? 4 board.
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 5) = 30 A)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
Forward Current
Forward Voltage @ I F
I PP
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non ? repetitive duty cycle.
ELECTRICAL CHARACTERISTICS
Uni ? Directional TVS
Device
Device
Marking
V RWM
(Note 6)
V
I R @ V RWM
m A
Breakdown Voltage
V BR (Note 7) Volts
Min Nom Max
@ I T
mA
V C @ I PP (Note 8)
V C I PP
V A
C typ
(Note 9)
pF
NS6A5.0AT3G
6QE
5.0
800
6.40
6.7
7.0
10
9.2
65.2
2700
6. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V BR measured at pulse test current I T at an ambient temperature of 25 ° C.
8. Surge current waveform per Figure 1.
9. Bias Voltage = 0 V, F = 1 MHz, T J = 25 ° C.
http://onsemi.com
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