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| 型号： | NSB12ANT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 600W 12V SMB |
| 标准包装： | 2,500 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.2V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 带卷 (TR) |
NSB12ANT3G
600 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional
http://onsemi.com
The NSB12ANT3G is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NSB12ANT3G is ideally
suited for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
business machines, power supplies, and many other industrial/
consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
600 WATT PEAK POWER
Specification Features:
? Working Peak Reverse Voltage Range - 12 V
? Peak Power - 600 Watts @ 1 ms at Maximum Clamp Voltage @
Peak Pulse Current
Cathode
Anode
? ESD Rating of Class 3 (> 16 kV) per Human Body Model
? ESD Rating IEC 61000-4-2 Level 4 (> 30 kV)
? Low Leakage < 5 m A at 12 V
? UL 497B for Isolated Loop Circuit Protection
? Response Time is Typically < 1 ns
? Pb-Free Package is Available
Mechanical Characteristics:
CASE: Void‐free, transfer‐molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260 ° C for 10 Seconds
LEADS: Modified L-Bend providing more contact area to bond pads
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
LEK G
G
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
A
Y
WW
LEK
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb-Free Package
Please See the Table on the Following Page
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSB12ANT3G
Package
SMB
Shipping ?
2500/Tape & Reel
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NSB12AN/D
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相关代理商/技术参数 |
参数描述 |
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| NSB13211DW6T1G | 功能描述:TRANS BRT DUAL COMPL SC-88 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式 系列:- 标准包装:3,000 系列:- 晶体管类型:1 个 NPN，1 个 PNP - 预偏压式（双） 电流 - 集电极 (Ic)（最大）:70mA，100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k，2.2k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz，200MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000784046 |
| NSB13ANT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 SMB TVS 600W 13V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| NSB13ANT3H | 制造商:ON Semiconductor 功能描述: |
| NSB1706DMW5T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| NSB1706DMW5T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual Bias Resistor Transistor |
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